Method of forming microcrystalline silicon-containing silicon ca

Details Method of forming microcrystalline silicon-containing silicon ca Method of forming microcrystalline silicon-containing silicon ca

1990-05-02

1991-06-04

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

148DIG1, 148DIG148, 148 334, 148 335, 437 3, 437100, 136258, H01L 31101

Patent

active

050211030

ABSTRACT:
A microcrystalline silicon-containing silicon carbide semiconductor film has an optical energy gap of not less than 2.0 eV, and a dark electric conductivity of less than 10.sup.-6 Scm.sup.-1. The Raman scattering light of the microcrystalline silicon-containing silicon carbide semiconductor film, which shows the presence of silicon crystal phase, has a peak in the vicinity of 530 cm.sup.-1. This microcrystalline silicon-containing silicon carbide semiconductor film is formed on a substrate by preparing a mixture gas having a hydrogen dilution rate .gamma., which is the ratio of the partial pressure of hydrogen gas to the sum of the partial pressure of a silicon-containing gas and the partial pressure of a carbon-containing gas, of 30, transmitting microwave of a frequency of not less than 100 MHz into the mixture gas near a substrate with an electric power density of not less than 4.4.times.10.sup.-2, and generating plasma at a temperature of the substrate of not less than 200.degree. C. and under a gas pressure of not less than 10.sup.-2 Torr.

REFERENCES:
patent: 4450316 (1984-05-01), Hamakawa et al.
patent: 4559552 (1985-12-01), Yamazaki
patent: 4591893 (1986-05-01), Yamazaki
Hattori et al., "Valency Control of a SIC:H prepared by ECR Plasma CVD" in Extended Abstracts of 34th. Spring Meeting of Japan Society of Applied Physics and Related Societies published Mar. 28, 1987.
Translation of 29p-F-17, "Valency Control of a-SiC:H Prepared by ECR Plasma CVD" in Extended Abstracts of 34th. Spring Meeting of Japan Society of Applied Physics and Related Societies published Mar. 28, 1987
Translation of Abstract of Japanese 60-117711, "Forming Apparatus of Thin Film".
Translation of 29p-F-18, "Improvement of P Type Injector In a-SiC Thin Film LED by ECR CVD" in Extended Abstracts of 34th. Spring Meeting of Japan Society of Applied Physics and Related Societies published Mar. 28, 1987.

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