Method of forming micro pattern of semiconductor device

Details Method of forming micro pattern of semiconductor device Method of forming micro pattern of semiconductor device

2011-06-07

2011-06-07

Deo, Duy-Vu N (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S717000, C438S725000

Reexamination Certificate

active

07955985

ABSTRACT:
A method for fabricating a semiconductor device includes forming a target etch layer over a substrate, a first auxiliary layer over the target etch layer, an isolation layer over the first auxiliary layer, and a second auxiliary layer over the isolation layer. A first exposure process is performed, where the first auxiliary layer is in focus and the second auxiliary layer is out of focus. A second exposure process is performed, where the second auxiliary layer in focus and the first auxiliary layer is out of focus. The second auxiliary layer is developed to form first mask patterns. The isolation layer and the first auxiliary layer are etched by using the first mask patterns to form second mask patterns. The second mask patterns are developed to form third mask patterns that are used to facilitate subsequent etching of the target etch layer.

REFERENCES:
patent: 6576536 (2003-06-01), Babcock
patent: 2005/0020016 (2005-01-01), Yang et al.
patent: 2006/0292868 (2006-12-01), Yoshikawa
patent: 10-2006-0134598 (2006-12-01), None

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