Method of forming metal lines

Details Method of forming metal lines Method of forming metal lines

1982-12-21

1983-08-23

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, 204192EC, 204192C, C23C 1500

Patent

active

044002572

ABSTRACT:
A method of forming metal lines is described for semiconductor processing wherein a line mask is initially ion milled to provide a mask contour which promotes the onset of chemical etching at the base of the mask. This produces a metal line that has a tapered cross-sectional dimension wherein the base of the line is narrower than the top.

REFERENCES:
patent: 4048712 (1977-09-01), Buiatti
patent: 4145459 (1979-03-01), Goel
patent: 4272561 (1981-06-01), Rothman et al.
patent: 4312113 (1982-01-01), Calviello
patent: 4325181 (1982-04-01), Yoder
patent: 4352716 (1982-10-01), Schaible et al.
patent: 4362597 (1982-12-01), Fraser et al.
"Masking for Ion Beam Etching" P. G. Gloersen; Solid State Technology, Apr. 1976, pp. 68-73.
"Microfabrication by Ion-Beam Etching" R. E. Lee; J. Vac. Sci. Tech., vol. 16, No. 2, Mar./Apr. 1979.

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