Method of forming metal line of semiconductor device

Details Method of forming metal line of semiconductor device Method of forming metal line of semiconductor device

2006-03-28

2006-03-28

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S622000, C438S706000

Reexamination Certificate

active

07018935

ABSTRACT:
Disclosed herein is a method of forming a metal line of a semiconductor device. The method includes forming a metal line connected to an underlying element by, for example, performing a main etching process and an over-etching process, at the same time, forming a metal fuse of which one side is connected to the metal line and the other side is connected to a semiconductor substrate. The method also includes forming the metal line of the semiconductor device by, for example, performing an over-etching process for isolating the metal line and the metal fuse electrically. Charges induced by plasma during the over-etching process for forming the metal line are accumulated in the metal line. According to the present invention, it is possible to minimize damage on the underlying element, since plasma-induced charges accumulated in the metal line are discharged into the semiconductor substrate through the metal fuse.

REFERENCES:
patent: 5747369 (1998-05-01), Kantimahanti et al.
patent: 6656826 (2003-12-01), Ishimaru

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