Method of forming metal interconnects

Details Method of forming metal interconnects Method of forming metal interconnects

1988-10-31

1990-04-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437231, 437246, 437190, 357 71, 148DIG26, H01L 21285

Patent

active

049200720

ABSTRACT:
Metal interconnects and method for forming same such that an intermediately formed aluminum layer provides an etch stop and etch mask during the tungsten etch back. The method may be used to form tungsten contacts without requiring pre-metal planarization of the semiconductor body.

REFERENCES:
patent: 4184909 (1980-01-01), Chang et al.
patent: 4367119 (1983-01-01), Logan et al.
patent: 4517225 (1985-05-01), Broadbent
patent: 4630357 (1986-12-01), Rogers et al.
patent: 4631806 (1986-12-01), Poppert et al.
patent: 4666737 (1987-05-01), Gimpelson et al.
patent: 4670091 (1987-06-01), Thomas et al.
patent: 4721689 (1988-01-01), Chaloux, Jr. et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4808552 (1989-02-01), Anderson
patent: 4824802 (1989-04-01), Brown et al.
"Phosphosilicate Glass Stabilization of MOS Structures" by Kaplan et al., J. Electrochem. Soc.; Solid State Science, vol. 118, No. 10, pp. 1649-1652.

Affiliated with

Also associated with

Rating

Method of forming metal interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming metal interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming metal interconnects will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-34546