Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-09-26
2006-09-26
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S243000, C438S244000, C438S253000, C438S387000, C438S396000
Reexamination Certificate
active
07112504
ABSTRACT:
As shown in FIG.10, using photoresist capacitance trench masking portion43as a mask, the exposed portions70, 72of the patterned capacitance dielectric layer32′ between the respective initial via openings36, 38and the capacitance trench masking portion43, the underlying twice patterned ARC18″ and the underlying twice patterned oxide layer16″ are etched down to a depth substantially equal to the bottom of the capacitance trench25to form respective trench openings56, 58contiguous and continuous with respective final via openings52, 54, in turn forming respective dual damascene openings57, 59. Final via openings52, 54expose underlying portions78of metal structure12and bottom electrodes30′, 30″. Capacitance trench25includes sidewalls50formed of remaining portions of capacitance dielectric layer32″.
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Hsin Ping-Yi
Wei Zan-Chun
Fourson George
Garcia Joannie Adelle
Taiwan Semiconductor Manufacturing Company
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