Method of forming metal-disilicide layers and contacts

Details Method of forming metal-disilicide layers and contacts Method of forming metal-disilicide layers and contacts

1994-04-14

1995-09-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, H01L 2144, H01L 2148

Patent

active

054496420

ABSTRACT:
A method of forming a metal-disilicide (MSi.sub.2) film from a silicon-on-insulator (SOI) substrate having an insulating underlayer and a silicon outerlayer includes the formation of a first capping layer on a portion of the silicon outerlayer. The first capping layer preferably includes titanium and a preselected metal (M) such as cobalt. A step is then performed to convert a first portion of the silicon outerlayer to metal-disilicide. This step is preferably accomplished by a rapid thermal annealing step. Thereafter, a second capping layer is formed on the metal-disilicide layer. The second capping layer preferably includes titanium and metal-monosilicide (MSi). Next, a step is performed to convert a second portion of the silicon outerlayer, beneath the first portion, to metal-disilicide while preventing phase-reversal of the already formed metal-disilicide layer to metal-monosilicide. This step is preferably accomplished by a rapid thermal annealing step as well. The method can preferably be used to form low resistance metal-disilicide contacts to active regions of SOI electronic devices.

REFERENCES:
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4901121 (1990-02-01), Gibson et al.
patent: 4908331 (1990-03-01), Raaijmakers
patent: 5010037 (1991-04-01), Lin et al.
patent: 5047111 (1991-09-01), Ishizaka et al.
patent: 5047367 (1991-09-01), Wei et al.
S. P. Murarka et al "Thin Film Interaction Between Titanium and Polycrystalline Silicon" J. Appl. Phys. 51(1) (Jan. 1960) pp. 342-349.
Fann-Mei Yang, et al. "Phase Transformations in Thin Films" Phase Transformation of Mo and W over Co pp. 329-334 (1993) Mater. Res. Soc. Pittsburg.
J. O. Olowolafe, et al. "Interactions of Cu with CoSi.sub.2,CrSi.sub.2, and TiSi.sub.2 " J. Appl. Phys. 68(12) 15 Dec. 1990, pp. 6207-6212.
Hong Feng et al "Solid State Interaction of Nano-Scale Silicide Formation for Co/Ti Multilayers on Silicon," Mater. Res. Soc. Symp. Proc. vol. 260 (1 May 1992) pp. 187-192 (Abstract).
Feng Hong et al., Nanoscale CoSi.sub.2 Contact Layer Growth from Deposited Co/Ti Multilayers on Si Substrates, Appl. Phys. Lett., vol. 61, No. 13, Sep. 28, 1992, pp. 1519-1521.
S. P. Murarka, et al., Cosputtered cobalt silicides on silicon, polycrystalline silicon, and silicon dioxide, J. Appl. Phys., vol. 56, No. 12, Dec. 1984, pp. 3404-3412.
Cecile d'Anterroches, et al., Transmission electron microscopy study of the formation of epitaxial CoSi.sub.2 /Si(111) by a room-temperature codeposition technique, Appl. Phys. Lett., vol. 52, No. 6, Feb. 1988, pp. 434-436.
K. Rajan, et al., Microstructural stability of epitaxial CoSi.sub.2 /Si(001) interfaces, J. Appl. Phys., vol. 70, No. 9, Nov. 1991, pp. 4853-4856.
T. L. Lin, et al., Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi.sub.2 on Si(111), Appl. Phys. Lett., vol. 52, No. 10, Mar. 1988, pp. 804-806.
J. C. Bean, et al., Silicon/metal silicide heterostructures grown by molecular beam epitaxy, Appl. Phys. Lett., vol. 37, No. 7, Oct. 1980, pp. 643-646.
R. T. Tung, et al., Growth of single-crystal CoSi.sub.2 on Si(111), Appl. Phys. Lett., vol. 40, No. 8, Apr. 1982, pp. 684-686.
J. P. Colinge, et al., CMOS Circuits Made in Thin Simox Films, Electronics Letters, vol. 23, No. 21, Oct. 1987, pp. 1162-1164.
J. P. Colinge, Subthreshold Slope of Thin-Film SOI MOSFET's, IEEE Electron Device Letters, vol. EDL-7, No. 4, Apr. 1986, pp. 244-246.
James C. Sturm, et al., Increased Drain Saturation Current in Ultra-Thin Silicon-on-Insulator (SOI) MOS Transistors, IEEE Electron Device Letters, vol. 9, No. 9, Sep. 1988, pp. 460-463.
Yasuo Yamaguchi, et al., Self-Aligned Silicide Technology for Ultra-Thin SIMOX MOSFET's, IEEE Transactions on Electron Devices, vol. 39, No. 5, May 1992, pp. 1179-1183.
S. L. Hsia, et al., Formation of epitaxial CoSi.sub.2 films on (001) silicon using Ti-Co alloy and bimetal source materials, J. Appl. Phys., vol. 70, No. 12, Dec. 1991, pp. 7579-7587.
P. H. Woerlee, et al., A Half-Micron CMOS Technology Using Ultra-Thin Silicon on Insulator, International Electron Devices Meeting (1990), No. 25.1.1-25.1.4, pp. 583-586.
Neal Kistler, et al., Sub-Quarter-Micrometer CMOS on Ultrathin (400 .ANG.) SOI, IEEE Electron Device Letters, vol. 13, No. 5, May 1992, pp. 235-237.
M. Lawrence, et al., Growth of epitaxial CoSi.sub.2 on (100)Si, Appl. Phys. Lett., vol. 58, No. 12, Mar. 1991, pp. 1308-1310.
S. L. Hsia, et al., Resistance and structural stabilities of epitaxial CoSi.sub.2 films on (001) Si substrates, J. Appl. Phys., vol. 72, No. 5, Sep. 1992, pp. 1864-1873.
Lisa T. Su, et al., Optimization of Series Resistance in Sub-0.2 .mu.m SOI MOSFETs, International Electron Devices Meeting (1993), No. 30.1.1-30.1.4, pp. 723-726.
Donald A. McQuarrie, et al., General Chemistry, W. H. Freeman and Company, publ., 1984, pp. 870-874.
S. L. Hsia, et al., CoSi and CoSi.sub.2 Phase Formation on Bulk and SOI Si Substrates, Materials Research Society Fall Meeting, Boston, Mass., Dec. 2, 1993.
S. L. Hsia, et al., Arsenic Diffusion and Segregation Behavior at the Interface of Epitaxial CoSi.sub.2 Film and Si Substrate, Materials Research Society Fall Meeting, Boston, Mass., Nov. 30, 1993.

Affiliated with

Also associated with

Rating

Method of forming metal-disilicide layers and contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming metal-disilicide layers and contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming metal-disilicide layers and contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-405196