Method of forming metal contact pads and terminals on semiconduc

Details Method of forming metal contact pads and terminals on semiconduc Method of forming metal contact pads and terminals on semiconduc

1991-07-12

1992-08-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437203, 437228, 148DIG143, H01L 2144

Patent

active

051378450

ABSTRACT:
A method of forming metal contact terminals (35) of a determined size having an insulating substrate (17) with a metal land (18) formed thereon and a passivating layer (19) provided with an opening exposing a part of the metal land by forming intermediate metal contact pad (33') in the contact opening, applying and patterning a photoresist, delineating the intermediate metal contact pad (33') using pattern (31) as an in-situ mask, depositing a lead-tin solder layer (34') over a metal mask to form a solder bump (34') on the final metal contact pad, and reflowing the solder to form a solder ball (34). Thereby achieving the metal contact terminal (35) at the contact pad site. The above method has applicability to the fabrication of contact terminals for high density/high count I/O connections for advanced semiconductor chips that are appropriate for flip-chip (C4) or face-down bonding thereof on metallized ceramic (MC) substrates.

REFERENCES:
patent: 4113578 (1978-09-01), Del Monte
patent: 4427715 (1984-01-01), Harris

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