Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-12-29
2000-04-25
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438700, H01L 21302, H01L 21451
Patent
active
060543892
ABSTRACT:
A method of forming electrical contacts between a first level electrode pattern and a second level electrode pattern through an inter-level dielectric is described. The method uses conducting metal pillars. A first level of electrodes is formed on a wafer. Conducting metal pillars are formed over the regions of the first level electrodes where contact is to be made. The conducting metal pillars are formed by depositing a layer of metal and forming the pillars using photolithographic techniques and etching. A layer of inter-level dielectric is then deposited over the conducting metal pillars and planarized thereby exposing the top surface of the pillars.
REFERENCES:
patent: 5100838 (1992-03-01), Dennison
patent: 5118385 (1992-06-01), Kumar et al.
patent: 5248854 (1993-09-01), Kudoh et al.
patent: 5270259 (1993-12-01), Ito et al.
patent: 5358902 (1994-10-01), Verhaar et al.
patent: 5502008 (1996-03-01), Hayakawa et al.
patent: 5677239 (1997-10-01), Isobe
patent: 5695601 (1997-12-01), Kodera et al.
patent: 5700348 (1997-12-01), Sakurai
patent: 5741741 (1998-04-01), Tseng
patent: 5795825 (1998-08-01), Sugano et al.
Oda et al. "0.6 .mu.m Pitch Highly Reliable Multilevel Interconnection Using Hydrogen Silicate Based Inorganic SOG for Sub-Quarter Micron CMOS Technology" 1997 Symposium on VLSI Technology Digest of Technical Papers, pp. 79-80.
List et al. "Integration of Ultra-Low-k Xerogel Gapfill Dielectric for High Performance Sub-0.18 .mu.m Interconnects", 1997 Symposium on VLSI Technology Digest of Technical Papers, pp. 77-78.
Ackerman Stephen B.
Deo Duy-Vu
Prescott Larry J.
Saile George O.
Utech Benjamin L.
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