Method of forming mark in IC-fabricating process

Details Method of forming mark in IC-fabricating process Method of forming mark in IC-fabricating process

2011-08-16

2011-08-16

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S700000, C257S797000, C257SE21525, C257SE23179

Reexamination Certificate

active

07998826

ABSTRACT:
A method of forming a mark in an IC fabricating process is described. Two parts of the mark each including a plurality of linear patterns are respectively defined by two exposure steps that either belong to two lithography processes respectively or constitute a double-exposure process including X-dipole and Y-dipole exposure steps.

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