Method of forming low resistance contacts at the junction betwee

Details Method of forming low resistance contacts at the junction betwee Method of forming low resistance contacts at the junction betwee

1995-02-24

1996-07-30

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257413, 257757, 257769, 257382, 257383, 257384, H01L 2976, H01L 2994, H01L 2348, H01L 2352

Patent

active

055414559

ABSTRACT:
A thin film transistor structure having a first and a second polycrystalline silicon layer of different conductivity types (P and N) has a high resistance contact at the resultant P-N junction. This contact resistance is reduced by forming TiSi.sub.2 (titanium disilicide) or other refractory metal silicides such as cobalt or molybdenum in specific regions, namely the P-N junction contact. Titanium disilicide consumes the portion of the second polycrystalline silicon layer in the P-N contact junction and at the same time consumes a small portion of the underlying first polycrystalline silicon layer, such that the high resistance P-N junction now no longer exists.

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Wolf et al., Silicon Processing, Lattice Press 1986, pp. 176-195.

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