Method of forming low resistance contacts at the junction betwee

Details Method of forming low resistance contacts at the junction betwee Method of forming low resistance contacts at the junction betwee

1993-04-29

1995-07-11

Quach, T. N.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437193, 437956, 148DIG19, H01L 2128

Patent

active

054321298

ABSTRACT:
A thin film transistor structure having a first and a second polycrystalline silicon layer of different conductivity types (P and N) has a high resistance contact at the resultant P-N junction. This contact resistance is reduced by forming TiSi.sub.2 (titanium disilicide) or other refractory metal silicides such as cobalt or molybdenum in specific regions, namely the P-N junction contact. Titanium disilicide consumes the portion of the second polycrystalline silicon layer in the P-N contact junction and at the same time consumes a small portion of the underlying first polycrystalline silicon layer, such that the high resistance P-N junction now no longer exists.

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patent: 5059554 (1991-10-01), Spinner et al.
patent: 5151387 (1992-09-01), Brady et al.
patent: 5187114 (1993-02-01), Chan et al.
patent: 5223447 (1993-06-01), Lee et al.
Wolf et al., Silicon Processing, Lattic Press 1986, pp. 176-195.

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