Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2009-02-27
2011-10-18
Tran, Long (Department: 2829)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S022000, C438S047000, C438S296000, C438S297000, C438S424000, C257S051000, C257S106000, C257S199000, C257S461000, C257S509000, C257S603000, C257S929000, C257SE21644
Reexamination Certificate
active
08039359
ABSTRACT:
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
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Chang George
Chang Ki
Keena Thomas
Liu Mingjiao
Parsey, Jr. John Michael
Hightower Robert F.
Semiconductor Components Industries LLC
Tran Long
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