Method of forming local interconnect structure without P-N junct

Details Method of forming local interconnect structure without P-N junct Method of forming local interconnect structure without P-N junct

1994-12-19

1995-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437 56, 437186, 437192, 437200, 148DIG39, 257382, 257385, 257903, H01L 2170

Patent

active

054787718

ABSTRACT:
An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.

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