Method of forming light-trapping surface for photovoltaic cell a

Details Method of forming light-trapping surface for photovoltaic cell a Method of forming light-trapping surface for photovoltaic cell a

1989-03-31

1990-04-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 2, 156657, 252 795, H01L 3118

Patent

active

049180304

ABSTRACT:
An improved textured surface of a photovoltaic device is provided by an anisotropic etching process in which pyramidal structures are formed on a silicon surface having a (100) crystallographic orientation. An aqueous solution of an alkali metal hydroxide is heated to approximately 85.degree. C. whereupon isopropyl alcohol is added. Separated silicon wafers are immersed in the solution for approximately 45 minutes. The wafers can be agitated for a limited time in the solution, and preferably the wafers and solution are covered during the etching step. The resulting pyramids are on the order of 14 microns high and 20 microns on each side of the base. The overlap of the pyramids provides desired random locations for the pyramids.

REFERENCES:
patent: 3266961 (1966-08-01), Emeis
patent: 3506509 (1970-04-01), Kragness
patent: 3738881 (1973-06-01), Erdman
patent: 3765969 (1973-10-01), Kragness
patent: 4137123 (1979-01-01), Barley
patent: 4758368 (1988-07-01), Thompson
Ghandhi, S., "VLSI Fabrication . . . ", 1983, pp. 488-489.

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