Method of forming light-emitting element

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C438S028000, C438S030000, C438S093000, C438S455000, C438S617000, C257S040000, C257S072000, C257SE21122, C257SE21570, C313S504000

Reexamination Certificate

active

07550305

ABSTRACT:
An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.

REFERENCES:
patent: 2006/0220544 (2006-10-01), Okuyama et al.
patent: 2007/0194303 (2007-08-01), Harada et al.
patent: 2001-036139 (2001-02-01), None
patent: 2001-156400 (2001-06-01), None
patent: 2002-015965 (2002-01-01), None
patent: 2002-299589 (2002-10-01), None
patent: 2004-146537 (2004-05-01), None
patent: 2005-012034 (2005-01-01), None

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