Method of forming light emitting diode by LPE

Details Method of forming light emitting diode by LPE Method of forming light emitting diode by LPE

1993-04-30

1994-02-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437126, 437127, 437130, H01L 21265

Patent

active

052847810

ABSTRACT:
A liquid phase epitaxial (LPE) melt is formed to be oversaturated with gallium arsenide, and to have a first temperature. A surface of a gallium arsenide substrate is converted to a first P-type layer (12). Subsequently, the first P-type layer (12) and the substrate (11) are covered with the LPE melt. A N-type layer (13) is formed on the first P-type layer (12) by reducing the first temperature of the LPE melt to a second temperature. A second P-type layer (14) is formed on the N-type layer (13) by reducing the second temperature of the LPE melt to a third temperature.

REFERENCES:
patent: 3755013 (1973-08-01), Hollau
patent: 3853643 (1974-12-01), Verleur
patent: 4218269 (1980-08-01), Van Oirschot et al.
patent: 4386975 (1983-06-01), Leibenzeder et al.
E. Munoz et al., "Effect of Arsenic Pressure On Heat Treatment Of Liquid Epitaxial GaAs", Applied Physics Letters, vol. 16, No. 7, Apr. 1970, pp. 262-265.

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