Method of forming layered polysilicon filled contact by doping s

Details Method of forming layered polysilicon filled contact by doping s Method of forming layered polysilicon filled contact by doping s

1988-09-02

1989-05-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437193, 357 71, H01L 21285

Patent

active

048290246

ABSTRACT:
A semiconductor process is provided for the formation of a very low resistance contact. After a straight wall contact is formed conventionally above a silicon substrate, a blanket metal barrier layer is deposited. A plurality of planar polysilicon layers are deposited above the metal barrier layer. The polysilicon layers have varying doping levels and are etched away. A byproduct gas of the etch reaction is monitored and the transition between polysilicon layers can be accurately noted. In this way, a layer of doped polysilicon is left above the metal barrier in the contact region. Metal may then be patterned over the entire structure to provide a low resistance reliable contact.

REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4364166 (1982-12-01), Crowder et al.
patent: 4424578 (1984-01-01), Miyamoto

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