Method of forming lateral resonant tunneling devices

Details Method of forming lateral resonant tunneling devices Method of forming lateral resonant tunneling devices

1993-07-27

2000-10-31

Bowers, Charles

Movable or removable closures

438481, 438595, 438962, H01L 2120

Patent

active

061394831

ABSTRACT:
A method of fabricating a quantum well device is presented which includes forming one or more quantum wells 48 by forming an epitaxy mask followed by selective deposition of one or more epitaxial layers. Selective deposition is accomplished by forming an epitaxy mask by sidewall defined masking, followed by epitaxial deposition of one or more layers (e.g. barrier layers 40 and 44 and a quantum layer 42) The epitaxy mask is formed by patterning an e-beam resist layer (e.g. polymethylmethacrylate 36), conformally depositing a glass layer (e.g. SiO.sub.2 38) on the resist, anisotropically etching the SiO.sub.2, and then removing the e-beam resist layer. The epitaxy mask fabrication technique allows patterning to define geometries that are much smaller than the beam itself and thereby provides the means required to define nanometer dimensioned horizontal (lateral) structures on and within epitaxial layers.

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