Method of forming lateral bipolar transistors

Details Method of forming lateral bipolar transistors Method of forming lateral bipolar transistors

1982-09-16

1983-12-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 29580, 29576W, 357 35, H01L 2122, H01L 21265

Patent

active

044191502

ABSTRACT:
The invention is a sub-micron dielectrically isolated transistor and method of making the same wherein hundreds of such transistors may be fabricated on a single chip with each transistor comprising an active region surrounded by a field oxide region, N+ spaced-apart doped portions within said regions and a P+ doped portion of said region spaced from each N+ doped portions, and electrical connections to the base P+ portion and the collector and emitter N+ portions. These regions are established by first forming boundary recesses about each active portion where a transistor will be formed, depositing arsenic in the recesses to form N+ regions in the transistor-active region adjacent the recesses, deepening the recesses, diffusing boron into the deepened recesses to dope the substrate P-type beneath the N+ regions and also between the N+ regions, and patterning and metallizing the substrate to develop the electrical connections of the base, emitter and collector electrodes.

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patent: 4283236 (1981-08-01), Sirsi
patent: 4290844 (1981-09-01), Rotolante et al.
patent: 4298402 (1981-11-01), Hingarh
patent: 4323913 (1982-04-01), Murrmann et al.
patent: 4338138 (1982-07-01), Cavaliere et al.

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