Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-06-02
1976-03-30
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576R, 29578, 29590, 148187, 156 6, 156 7, 156 17, 204192, 219121EB, 219121EM, 357 50, 357 51, 357 52, 357 65, H01L 21283, H01L 21302
Patent
active
039472981
ABSTRACT:
A semiconductor integrated circuit in which accurate location of emitter contacts on diffused emitter regions is achieved by using an apertured multilayered mask on the surface of a semiconductor body through which the impurity forming the emitter region is diffused into the body from an oxidizing atmosphere such that the emitter region diffuses laterally to form junctions beyond the edges of said apertures and beneath the mask for a distance which is a function of the depth of the junctions and the coating formed during the diffusion process is removed by R.F. sputtering which removes the emitter oxide without substantially undercutting the oxide layer beneath the nitride barrier layer of the emitter mask so that the junction on the surface of the semiconductor body produced by the lateral diffusion of the emitter region remains covered by the surface passivating oxide layer. Structures having microminiature emitter areas and depths with and without preferentially etched isolation regions are disclosed.
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Valletta, R. M., "Control of Edge Profile in Sputter Etching," I.B.M. Tech. Discl. Bull., Vol. 10, No. 12, May 1968, p. 1974.
Larkin et al., "Electron Beam Fabrication . . . Transistors" Solid-State Electronics, Vol. 10, 1967, pp. 491-496.
Bartlett Milton D.
Inge John R.
Pannone Joseph D.
Raytheon Company
Rutledge L. Dewayne
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