Method of forming isolation structures in a semiconductor...

Details Method of forming isolation structures in a semiconductor... Method of forming isolation structures in a semiconductor...

2006-01-30

2009-02-17

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C257SE21546

Reexamination Certificate

active

07491621

ABSTRACT:
A method for forming shallow trench isolation structures is disclosed. The methods include providing a substrate having an upper surface and having an opening extending down from said upper surface, providing a first dielectric layer over at least a portion of the upper surface of the substrate and filling the opening, providing a second dielectric layer over the first dielectric layer, and removing portions of the first and second dielectric layers, wherein the first dielectric layer has a higher index of refraction than the second dielectric layer.

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