Method of forming isolation structure of semiconductor device

Details Method of forming isolation structure of semiconductor device Method of forming isolation structure of semiconductor device

2006-05-02

2010-02-16

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C257SE21546

Reexamination Certificate

active

07662697

ABSTRACT:
A method of forming a semiconductor device includes etching a semiconductor substrate to form a first trench having a first width and a first depth; etching the semiconductor substrate to form a second trench having a second width and a second depth, the second trench overlapping the first trench, the second width being greater than the first width, the second depth being less than the first depth, whereby a trench having a dual structure is formed; and forming a first isolation structure within the trench having the dual structure. An embodiment of the present invention relates to a method of forming an isolation structure of a semiconductor device.

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