Method of forming isolation structure for semiconductor...

Details Method of forming isolation structure for semiconductor... Method of forming isolation structure for semiconductor...

2011-03-29

2011-03-29

Huynh, Andy (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S407000, C438S423000, C438S425000

Reexamination Certificate

active

07915137

ABSTRACT:
Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to protect the structures from erosion during later process steps. The top surfaces of the isolation structures are coplanar with the surface of the substrate. Field doping regions may be formed beneath the field oxide regions. To meet the demands of different devices, the isolation structures may have varying widths and depths.

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