Method of forming isolation structure

Details Method of forming isolation structure Method of forming isolation structure

1997-12-29

2000-05-30

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438757, H01L 2176

Patent

active

060690569

ABSTRACT:
A method of forming an isolation region of a semiconductor device, includes the steps of forming a first insulating film on a substrate; defining a plurality of isolation regions on the first insulating film; removing portions of the first insulating film in the isolation regions to expose portions of the substrate; selectively removing the exposed portions of the substrate to form at least one trench; forming a second insulating film in the at least one trench and on portions of the first insulating film; and removing the first insulating film so as to remove the second insulating film formed thereon.

REFERENCES:
patent: 5310457 (1994-05-01), Ziger
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5565376 (1996-10-01), Lur et al.
patent: 5721173 (1998-02-01), Yano et al.
patent: 5880007 (1999-03-01), Varian et al.

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