Fishing – trapping – and vermin destroying
Patent
1991-08-29
1993-06-01
Fourson, George
Fishing, trapping, and vermin destroying
437968, H01C 2176
Patent
active
052159353
ABSTRACT:
A method of forming a isolation region in a semiconductor device includes the steps of forming an underlying oxide film on a semiconductor substrate, forming a first polysilicon layer on the underlying oxide film, forming a silicon nitride film on the first polysilicon layer, patterning the silicon nitride film such that the silicon nitride film is left only on a circuit element region of the substrate at which a circuit element is to be formed, depositing selectively a second polysilicon layer by vapor deposition on regions of the first polysilicon layer which are exposed by patterning, and forming isolation regions of silicon oxide by thermally oxidizing at least the second and the first polysilicon layers using the patterned nitride film as a mask.
REFERENCES:
Publication entitled, "The Influence of the LOCOS Processing Parameters on the Shape of the Bird's Beak Structure", by T.-C. Wu et al., Philips Research Laboratories, Jul. 1983, pp. 1563-1566.
Publication entitled "Application of Selective Silicon Epitaxial Growth for CMOS Technology", by Shigeo Nagao et al., IEEE Tansactions on Electron Devices, vol. ED-38, No. 11 (Nov. 1986), pp. 1738-1744.
Fourson George
Mitsubishi Denki & Kabushiki Kaisha
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