Method of forming isolation layer of semiconductor device

Details Method of forming isolation layer of semiconductor device Method of forming isolation layer of semiconductor device

2006-12-28

2010-06-15

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S425000, C438S426000, C257S510000, C257S396000

Reexamination Certificate

active

07736991

ABSTRACT:
A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. A spacer is formed on sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches. Each second trench is narrower and deeper than the corresponding first trench. A first oxide layer is formed on sidewalls and a bottom surface of each of the second trenches. The first trench is filled with an insulating layer.

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