Method of forming isolation layer of semiconductor device

Details Method of forming isolation layer of semiconductor device Method of forming isolation layer of semiconductor device

2011-07-12

2011-07-12

Le, Dung A (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C438S431000, C438S424000, C438S508000

Reexamination Certificate

active

07977205

ABSTRACT:
A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. Sidewalls and a bottom surface of each of the first trenches are oxidized by a radical oxidization process to form a first oxide layer. An oxidization-prevention spacer is formed on the sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches, wherein each second trench is narrower and deeper than the corresponding first trench. The second trenches are filled with a second oxide layer. The first trenches are filled with an insulating layer.

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