Method of forming isolation film in semiconductor device

Details Method of forming isolation film in semiconductor device Method of forming isolation film in semiconductor device

2006-10-24

2006-10-24

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S906000, C257SE21228, C134S002000

Reexamination Certificate

active

07125784

ABSTRACT:
The present invention relates to a method for forming an isolation film in a semiconductor device. After a trench for isolation is formed, a polymer film is stripped by a post cleaning process using BFN. A pre-treatment cleaning process using only SC-1 is performed and a sidewall oxidization process is then carried out. It is therefore possible to improve fail of the roughness of the trench sidewall and to easily strip polymer. Furthermore, since a conventional PET process is omitted, an isolation film manufacturing process is simplified. It is also possible to prohibit out-diffusion of dopants injected into a semiconductor substrate through a pre-treatment cleaning process using CLN N before the sidewall oxidization process. Incidentally, by forming a slope at the top corner of the trench, it is possible to prevent a gate oxide film thinning phenomenon that the gate oxide film thinner than a desired thickness is deposited at the trench corner. It is also possible to improve electrical properties of a device since an active region as much as a target critical dimension is secured.

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