Method of forming isolating region

Details Method of forming isolating region Method of forming isolating region

1997-07-07

1999-11-09

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438951, 438704, 438732, H01L 21762

Patent

active

059813555

ABSTRACT:
A method of forming an isolating region of a semiconductor device including the steps of: forming first insulating layers which vary in width on a substrate; forming trenches which vary in width on the substrate by using the first insulating layers as a mask; forming second insulating layers on the trenches and the first insulating layers; exposing the predetermined portions of the first insulating layers by etching the second insulating layers; and wet-etching the first insulating layers and the non-etched portions of the second insulating layers. In the present invention, an isolating region in the narrow trench is formed without voids by regulating the deposition/etching ratio during the formation of an insulating layer in a trench.

REFERENCES:
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patent: 5192706 (1993-03-01), Rodder
patent: 5242853 (1993-09-01), Sato et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5504033 (1996-04-01), Bajor et al.
patent: 5721173 (1998-02-01), Yano et al.
patent: 5763315 (1998-06-01), Benedict et al.

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