Fishing – trapping – and vermin destroying
Patent
1992-10-22
1993-12-07
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 59, 437151, 437 63, H01L 21266
Patent
active
052683125
ABSTRACT:
A junction isolated P-well is formed for high performance BiCMOS. Two dopants of opposite conductivity types are implanted and co-diffused inside an annular N-type region to form a narrow N-type buried layer positioned between two P-type regions. N-type buried layer is formed having P-type doped regions above and below the N-type buried layer so that the N-type buried layer is narrow. The P-type region above the N-type buried layer provides for a retrograde profile of the P-well formed above it. Besides the P-well isolation, the P-type region below the N-type buried layer acts as a ground plane which collects noise, which helps to prevent it from being coupled to other devices of the BiCMOS circuit.
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D. de Lang et al, "Integration of Vertical PNP Transistors in a Double-Polysilicon Bi-CMOS Process", Bipolar Circuits and Technology Meeting, IEEE, 1989.
Dragon Christopher P.
Monk David J.
Reuss Robert H.
Chaudhari C.
Hearn Brian E.
Jackson Miriam
Motorola Inc.
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