Method of forming isolated regions of oxide

Details Method of forming isolated regions of oxide Method of forming isolated regions of oxide

1991-08-30

1993-11-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 61, 437 62, 437 70, H01L 2176

Patent

active

052602290

ABSTRACT:
A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over a portion of a substrate. A first silicon nitride layer is formed over the pad oxide layer. A polysilicon buffer layer is then formed over the first silicon nitride layer. A second silicon nitride layer is formed over the polysilicon layer. A photoresist layer is formed and patterned over the second silicon nitride layer. An opening is etched through the second silicon nitride layer and the polysilicon buffer layer to expose a portion of the first silicon nitride layer. A third silicon nitride region is then formed on at least the polysilicon buffer layer exposed in the opening. The first silicon nitride layer is etched in the opening. A field oxide region is then formed in the opening.

REFERENCES:
patent: 4755477 (1988-07-01), Chao

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