Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1992-09-04
1994-08-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257506, 257371, 257586, 257912, 257622, 257914, 257905, 437 69, 437 70, 437 72, H01L 2934, H01L 2906, H01L 2712, H01L 2978
Patent
active
053389689
ABSTRACT:
A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over the integrated circuit. A nitrogen doped polysilicon layer is formed over the pad oxide layer. A thick nitride layer is then formed over the nitrogen doped polysilicon layer. An opening is formed in the nitride layer and the nitrogen doped polysilicon layer exposing a portion of the pad oxide layer. The nitrogen doped polysilicon layer is annealed encapsulating the polysilicon layer in silicon nitride. A field oxide region is then formed in the opening.
REFERENCES:
patent: 4016007 (1977-04-01), Wada et al.
patent: 4406051 (1983-09-01), Iizuka
patent: 4407696 (1983-10-01), Han et al.
patent: 4508757 (1985-04-01), Fabricius et al.
patent: 4516316 (1985-05-01), Haskell
patent: 4564394 (1986-01-01), Bussman
patent: 4580156 (1986-04-01), Comizzoli
patent: 4630356 (1986-12-01), Christie et al.
patent: 4740481 (1988-04-01), Wilson et al.
patent: 4879586 (1989-11-01), Brostrom et al.
patent: 5002898 (1991-03-01), Fritzinger et al.
patent: 5159430 (1992-10-01), Manning et al.
Bryant Frank
Hodges Robert
Arroyo T. M.
Crane Sara W.
Hill Kenneth C.
Jorgenson Lisa K.
Robinson Richard K.
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