Metal treatment – Compositions – Heat treating
Patent
1985-05-31
1986-02-11
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 29576B, 29579, 148187, 156643, 156657, 357 50, 357 91, H01L 2978, H01L 21265, H01L 2131
Patent
active
045696985
ABSTRACT:
A method for forming isolation regions in a semiconductor structure is provided. A mask comprising an upper and a lower layer of different materials is provided over the surface of the structure. A window is formed in the upper layer over the portions of the structure wherein the isolation regions are to be provided. Using the window in the upper layer as a mask, a larger window is formed in the lower layer by bringing a chemical etchant which etches only the lower layer into contact with the portions of the lower layer exposed by the window in the upper layer. The larger window formed in the lower layer is used as an etching mask to form an isolation groove, or depression, in the underlying semiconductor structure. The upper layer having the smaller window is used as an ion implantation mask for implanting particles into the bottom portion of the groove while masking the side portions of the grooves from the ions. With such method, lateral oxidation regions having self-registered anti-inversion regions which are located under the bottoms of the isolation regions and are spaced from the peripheries of the isolation regions by uniform, predetermined distances are obtained.
REFERENCES:
patent: 3783047 (1974-01-01), Paffen
patent: 4084987 (1978-04-01), Godber
patent: 4157269 (1979-06-01), Ning et al.
patent: 4187125 (1980-02-01), Feist
patent: 4261763 (1981-04-01), Kumar et al.
patent: 4318751 (1982-03-01), Horng
patent: 4351099 (1982-09-01), Takagi et al.
patent: 4372030 (1983-02-01), Saitoh
patent: 4373965 (1983-02-01), Smigelki
patent: 4374698 (1983-02-01), Sanders et al.
patent: 4412378 (1983-11-01), Shinada
patent: 4418470 (1983-12-01), Naster et al.
Gaylon, G. T., IBM-TDB, 18 (1975), 1854.
Ozawa et al., IEEE-Trans. Electron Devices ED-25 (1978), 56-57.
Rideout et al., IBM-TDB, 17 (1974), 949.
Raytheon Company
Roy Upendra
Sharkansky Richard M.
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