Method of forming ion implants self-aligned with a cut

Details Method of forming ion implants self-aligned with a cut Method of forming ion implants self-aligned with a cut

1981-12-10

1983-08-16

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 156643, 1566611, 427 431, H01L 21265, H01L 2126, B05D 306

Patent

active

043989640

ABSTRACT:
A method of fabricating a thick field oxide isolation layer employs dual photoresist layers and selective ion implantation. A thick field oxide layer is grown on a silicon wafer and is covered with a negative photoresist layer followed by a thicker positive photoresist layer. The positive photoresist layer is exposed through a mask and developed to leave a portion remaining where an aperture in the field oxide is to be made. Boron ions are implanted into the silicon wafer through the layers not covered by positive photoresist. The remaining positive photoresist and the underlying negative photoresist are removed to expose the field oxide, after which the patterned negative photoresist is used as a mask to etch a hole in the field oxide that is self-aligned between the boron implants.

REFERENCES:
patent: 4004044 (1977-01-01), Franco et al.
patent: 4022932 (1977-05-01), Feng
patent: 4040891 (1977-08-01), Chang et al.
patent: 4144101 (1979-03-01), Rideout
patent: 4201800 (1980-05-01), Alcorn et al.
patent: 4231811 (1980-11-01), Somekh
patent: 4253888 (1981-03-01), Kikuchi
patent: 4311533 (1982-01-01), Roche
patent: 4341571 (1982-07-01), Hiss et al.
patent: 4350541 (1982-09-01), Mizushima et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 5, Oct. 1978, pp. 1900-1901.

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