Method of forming intralayer junctions in a multilayer structure

Details Method of forming intralayer junctions in a multilayer structure Method of forming intralayer junctions in a multilayer structure

1975-04-02

1976-10-05

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

204 16, 204 24, 204 38B, C25D 534, C25D 700

Patent

active

039842908

ABSTRACT:
A method of forming intralayer junctions in a multilayer structure comprising alternating metal and dielectric layers comprising forming an auxiliary electrically conductive film on the surface of the dielectric layers to be metal plated by the method of electrolytical deposition of a metal film. The auxiliary film is formed by immersing the multilayer structure into a solution containing ions of a metal, which is more electropositive than the metal of the metal layers. The structure is allowed to stay in this solution until the formation of a continuous electrically conductive film of the metal, whose ions are contained in the solution, over the entire surface to be metal plated. The film has a monolithic structure in the dielectric zones of this surface and a porous structure in the metal zones. Then the structure is treated with a solution selectively reacting with the metal of the metal layers or with the metal of the metal layers and with the porous zones of the continuous electrically conductive film so as to remove from the metal layers the zones of the continuous electrically conductive film having a porous structure.
In another embodiment of this method the auxiliary film is formed by immersing the multilayer structure into a solution containing soluble complex salts, metal salts, pH-controlling additives and chalcogenizers. The structure is allowed to stay in this solution until the formation of a continuous electrically conductive film of metal chalcogenides over the entire surface to be metal plated. Then the structure is treated with a solution selectively reacting with the metal of the metal layers or with the metal of the metal layers and with the zones of the film of metal chalcogenides disposed on the end faces of the metal layers so as to remove these zones.

REFERENCES:
patent: 2872391 (1959-02-01), Hauser et al.
patent: 3532801 (1970-10-01), Faulkner
patent: 3571923 (1971-03-01), Shaheen et al.

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