Fishing – trapping – and vermin destroying
Patent
1991-09-24
1994-03-01
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
148DIG118, 4272553, 437240, H01L 21316
Patent
active
052907368
ABSTRACT:
A silicon oxide film to be used as an interlayer-insulating film in a semiconductor device is formed by a high pressure organic silane-O.sub.3 CVD. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature of 350.degree. C. A mixture of an organic silane gas such as TEOS, HMDS and OMCTS and an ozone gas is introduced into the reaction vessel and the reaction is carried out at a pressure higher than the atmospheric pressure, preferably at a pressure of about 2 atm to form a silicon oxide film having excellent properties. A life time of the ozone gas which serves as an oxiding agent and/or catalyst can be prolonged under the high pressure, and therefore a deposition rate of the silicon oxide film ca be increased and the flatness of the silicon oxide film can be improved. Therefore, the silicon oxide film forming process can be performed efficiently and a flatening process after the formation of the silicon oxide film can be made simpler.
REFERENCES:
patent: 4072947 (1989-10-01), Wang et al.
patent: 4845054 (1989-07-01), Mitchener
patent: 4900591 (1990-02-01), Bennett et al.
Lee et al., "Sub-Atmospheric Chemical Vapor Deposition (SACVD) of TEOS-Ozone USG and BPSG", VMIC Conference, Jun. 12-13, 1990, pp. 396-398.
Kotani et al., "Low-Temperature APCVD oxide using TEOS-ozone chemistry for Multilevel Interconnections," I.E.D.M., 1989, pp. 669-672.
Wolf et al., "Silicon Processing for the VLSI Era", Lattice Press, Calif., 1986, pp. 168-169.
Hashimoto Tsuyoshi
Katagiri Tomoharu
Ohta Tomohiro
Sato Nobuyoshi
Tokunaga Kyoji
Chaudhuri Olik
Horton Ken
Kawasaki Steel Corporation
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