Method of forming interconnection patterns

Fishing – trapping – and vermin destroying

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437190, 437192, 437197, 437228, 156643, H01L 21283

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active

051983885

ABSTRACT:
Disclosed is a method which enables a sufficient anti-corrosion processing of an interconnection pattern. An interconnection layer is formed on a semiconductor substrate. The interconnection layer is selectively etched by employing a halogen-type gas, so as to form an interconnection pattern. The interconnection pattern is irradiated with deep UV light in a vacuum of 1.times.10.sup.-4 Torr or less in degree. Even if a protection film including halogen is formed on the side wall of the interconnection pattern upon reactive ion etching, this method enables sufficient removal of the halogen in a sufficient time and a complete anti-corrosion processing of the interconnection pattern.

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Article entitled "Photon Stimulated Gas Desorption from Pure Aluminum", Iwata et al., J. Vac. Sci. Technol. A, vol. 6, No. 3, May/Jun. 1988.
Article entitled "Effects of Ti Interlevel Existence in Al/Ti/TiN/Ti Structure for Highly Reliable Interconnection", by Maeda et al., VLSI Symposium, 1985.
Ikawa et al., "Si Surface Treatment Using Deep UV Irradiation," Proceedings of Symposium on Dry Process, Oct. 24-25, 1985, pp. 25-29.

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