Method of forming interconnection

Details Method of forming interconnection Method of forming interconnection

1996-07-09

1998-03-03

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437246, 4272552, 20419215, H01L 21443

Patent

active

057233624

ABSTRACT:
A method of forming an interconnection in a contact hole having a high aspect ratio, which is capable of certainly forming a barrier layer metal layer and burying a blanket W film in the contact hole without generation of any void. A Ti film is deposited in a contact hole by sputtering using a sputter system having a collimator plate and an oxidation preventive TiN thin film is deposited thereon by reactive sputtering using the same sputter system having the collimator plate. Next, a titanium silicide layer is formed by a first heat-treatment and a TiN film is formed by a second heat-treatment. Finally, a blanket W film is deposited by CVD to be buried in the contact hole.

REFERENCES:
patent: 4783248 (1988-11-01), Kohlhase et al.
patent: 5401675 (1995-03-01), Lee et al.
patent: 5529670 (1996-06-01), Ryan et al.

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