Method of forming interconnect structure with low dielectric...

Details Method of forming interconnect structure with low dielectric... Method of forming interconnect structure with low dielectric...

2005-06-14

2005-06-14

Wilson, Christian (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S421000, C438S700000, C438S701000, C438S734000

Reexamination Certificate

active

06905938

ABSTRACT:
The present invention provides a method for forming low dielectric constant inter-metal dielectric layer. The method includes providing a semiconductor substrate and forming a first dielectric layer on the semiconductor substrate. Conductor structures are formed in the first dielectric layer. The partial first dielectric layer is removed by using the conductor structures as etching mask. A second dielectric layer is formed between the conductor structures, which has a dielectric constant smaller than the first dielectric layer. The second dielectric layer also alternatively has air voids contained therein to reduce dielectric constant.

REFERENCES:
patent: 5641712 (1997-06-01), Grivna et al.
patent: 5792706 (1998-08-01), Michael et al.
patent: 6208015 (2001-03-01), Bandyopadhyay et al.
patent: 6451669 (2002-09-01), Torres et al.
patent: 6583489 (2003-06-01), Wang et al.
patent: 6657305 (2003-12-01), Cohen et al.

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