Method of forming integrated circuit metal interconnect structur

Details Method of forming integrated circuit metal interconnect structur Method of forming integrated circuit metal interconnect structur

1978-12-04

1979-07-17

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

357 71, C25D 502, H01L 2348

Patent

active

041614305

ABSTRACT:
A method for forming an aluminum interconnect structure on an integrated circuit chip which method employs the anodization of the aluminum but eliminates the necessity for the formation of a hard anodic barrier on the aluminum. Furthermore, the technique provides a superior "cold via" contact. A layer of molybdenum is deposited over the aluminum conductive layer which molybdenum layer is not as wide as the desired interconnect structure and then covered with a dielectric which is patterned to the same width as the desired interconnect structure so as to protect the molybdenum from attack by an electrolyte. Anodization can then be performed to achieve the interconnect structure and a via is etched in the dielectric.

REFERENCES:
patent: 3741880 (1973-06-01), Shiba et al.
patent: 3864217 (1975-02-01), Takahata et al.
patent: 3939047 (1976-02-01), Tsunemitsu
patent: 4045302 (1977-08-01), Gibb et al.

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