Method of forming insulating films, capacitances, and semiconduc

Details Method of forming insulating films, capacitances, and semiconduc Method of forming insulating films, capacitances, and semiconduc

1994-05-27

1997-09-09

Nguyen, Nam

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

20419215, 20419222, 438396, C23C 1434

Patent

active

056652100

ABSTRACT:
Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion of the inert gas is decreased to 25 atom % or lower. By this sputtering condition, adverse effects caused by the inert gas is suppressed so that the quality of the insulating film is substantially improved.

REFERENCES:
patent: 3607679 (1971-09-01), Melroy et al.
patent: 3607697 (1971-09-01), Shirn et al.
patent: 3616400 (1971-10-01), Wasa et al.
patent: 3763026 (1973-10-01), Cordes
patent: 4350537 (1982-09-01), Young et al.
patent: 4427723 (1984-01-01), Swain
patent: 4515668 (1985-05-01), Brownell et al.
patent: 4539431 (1985-09-01), Moddel et al.
patent: 4581248 (1986-04-01), Roche
patent: 4624736 (1986-11-01), Gee et al.
patent: 4732659 (1988-03-01), Schachter et al.
patent: 4790920 (1988-12-01), Krzanich
patent: 4804640 (1989-02-01), Kaganowicz et al.
patent: 4849081 (1989-07-01), Ross
patent: 4883543 (1989-11-01), Gossen, Jr. et al.
patent: 4906328 (1990-03-01), Freeman et al.
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 4987008 (1991-01-01), Yamazaki et al.
patent: 5006481 (1991-04-01), Chan et al.
patent: 5043298 (1991-08-01), Yamada et al.
patent: 5203929 (1993-04-01), Takayanagi et al.
patent: 5213997 (1993-05-01), Ishihara et al.
Young et al., "Correlation . . . Ta.sub.2 O.sub.5 films", J. Vac. Sci. Technol., vol. 14, No. 1, Jan./Feb. 1977.
Schrieber et al., J. Electrochem Soc., vol. 123, No. 1, pp. 30-33 (1976).
Suyama et al., "Electrical Conduction Mechanism and Brakdown Property in Sputter-Deposited Silicon Dioxide Films on Polycrystalline Silicon", J. Appl. Phys. vol. 65, No. 1, 1 Jan. 1989, pp. 210-214.
Jones et al., "Effect of Oxygen on the rf-Sputtering Rate of SiO.sub.2 ", J. Vacuum Sci. and Technology, vol. 5, No. 3, pp. 84-87.
Kozuma et al., "Some Properties of Silica Film Made by RF Glow Discharge Sputtering", J. Jap of Appl. Phys., vol. 9, No. 8, Aug. 1970, pp. 983-991.
Schreiber et al., "High Wuality RF-Sputtered Silicon Dioxide Layers", J. Electrochem. Soc., vol. 123, No. 1, 1976, pp. 30-31.
Suyama et al., Chem. Abstracts 109573w, Mar. 12, 1990, p. 750.
Young et al., "Effect of Pulse Duration on the Annealing of Ion Implanted Silicon With a XeC1 Excimer Laser and Solar Cells", Mat. Res. Soc. Symp. Proc., vol. 13, 1983, pp. 401-406.

Affiliated with

Also associated with

Rating

Method of forming insulating films, capacitances, and semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming insulating films, capacitances, and semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming insulating films, capacitances, and semiconduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-66710