Chemistry: electrical and wave energy – Processes and products
Patent
1974-01-07
1976-01-27
Tufariello, T. M.
Chemistry: electrical and wave energy
Processes and products
29588, 156 3, 204 15, 357 72, C25D 502, B01J 1700, H01L 2328
Patent
active
039350835
ABSTRACT:
A method for forming an insulating film on an interconnection layer for an integrated circuit, or the like, includes the steps of forming an aluminum layer on the surface of a substrate, oxidizing a thin portion of the upper surface of the aluminum layer in order to convert the thin parts into a porous alumina film, applying a photoresist film having a predetermined pattern on the upper surface of the porous alumina film, and etching those portions of the porous alumina film, together with the aluminum layer which are not covered with the photoresist film. Then, the photoresist film is removed and an aluminum film is formed on the entire surface of the resulting substrate; the aluminum film is oxidized, to form a porous alumina film, and the surface of the remaining aluminum layer is anodized, in order to form a non-porous alumina film. Finally, unnecessary portions of the remaining porous alumina film are removed, and a film is formed by chemical vapor deposition on the resulting structure.
REFERENCES:
patent: 3741880 (1973-06-01), Shiba et al.
patent: 3785937 (1974-01-01), McMahon et al.
patent: 3798135 (1974-03-01), Bracken et al.
Agastuma Takashi
Kikuchi Akira
Nakata Kensuke
Tomozawa Akihiro
Hitachi , Ltd.
Tufariello T. M.
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