Method of forming inorganic alignment film, inorganic...

Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only

Reexamination Certificate

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C349S124000, C427S532000, C428S001210

Reexamination Certificate

active

07084946

ABSTRACT:
A method of forming an inorganic alignment film is provided comprising a first milling step of irradiating ion beams to a surface of a base substrate, on which the inorganic alignment film is to be formed, from a direction inclined at a predetermined angle θawith respect to a direction orthogonal to the surface of the base substrate, a film-forming step of forming a film made substantially of an inorganic material on the base substrate to which the ion beams are irradiated, and a second milling step of irradiating ion beams to a surface of the film from a direction inclined at a predetermined angle θbwith respect to the direction orthogonal to the surface of the film.

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