Method of forming improved encapsulation layer

Details Method of forming improved encapsulation layer Method of forming improved encapsulation layer

1988-12-30

1991-02-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437173, 437973, 148DIG154, 148DIG152, H01L 2120

Patent

active

049904647

ABSTRACT:
An improved technique for forming silicon-on insulator films for use in integrated circuits. The technique provides an improved encapsulation layer to enable in a reproducible way the zone melt recrystallization of such films. The encapsulation layer consists of a first layer of a doped SiO.sub.2 (silicate glass) on which a further layer of Si.sub.3 N.sub.4 is deposited. The doped SiO.sub.2 forms a fusible glassy material which is rendered semi-liquid and flows at the temperatures used in recrystallization. The softening of the encapsulation material accommodates volume expansion and eliminates the biaxial stresses in the layered structure. The Si.sub.3 N.sub.4 layer adds mechanical strength to the SiO.sub.2 layer and improves the wetting angle.

REFERENCES:
patent: 4543133 (1985-09-01), Mukai
patent: 4590130 (1986-05-01), Cline
patent: 4743567 (1988-05-01), Pandya et al.
"Investigation of the Si Beading Phenomena During Zone Melting Recrystallization", Weinberg et al; Appl. Phys. Lett., vol. 43, No. 12, 12/83, pp. 1105-1107.
"Wetting Angles and Surface Tension in the Crystallization of Thin Liquid Film", Yablonovitch et al; J. Electrochem. Soc; vol. 131, No. 11; 11/89; pp. 2625-2630.
"Focused Lamp Zone Melting Recrystallization of Silicon on Insulating Substrates"; Sakurai; J. Electrochem. Soc; Jul. 86; vol. 133, No. 7; pp. 1485-1488.
J. Electrochem. Soc., vol. 129, pp. 2812-2818 (Dec. 1982); "Zone-Melting Recrystallization of Si Films with a Moveable-Strip-Heater Oven"; Geis et al.

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