Method of forming implanted regions in a semiconductor device by

Fishing – trapping – and vermin destroying

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357 42, 357 91, 437 36, 437 56, 437147, H01L 21225, H01L 2978

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047328690

ABSTRACT:
A method is provided in which an implantation treatment is carried out at a high energy of implantation in a semiconductor body (1) provided with a pattern of field insulation (6a) and in which the semiconductor body is provided with a masking, comprising a comparatively thin layer (8), a second comparatively thick layer (9) of a semi-masking material and a third comparatively thin layer (10). The second layer (9) is provided with openings (12) and the first layer (8) covers at least those parts of the surface which correspond to these openings (12). The third layer (10) has openings (22) each corresponding to one of the openings (12). The material of the first layer (8) differs from that of the second layer (9) and the material of the second layer (9) differs from that of the third layer (10). Preferably, simultaneously with the second layer (9) on the front side a semiconductor layer (19) is provided on the back side (3 ) of the semiconductor body (1).

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Bergeron et al., Solid State Tech., Aug. 1982, p. 98.
Kimizuka et al., J. Vac. Sci. Technol B-3, Jan.-Feb. 1985, p. 16.
Taur et al., IEEE-Trans. Electron Devices, Ed.-32, (1985), 203.

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