Method of forming III-V semi-insulating films using organo-metal

Details Method of forming III-V semi-insulating films using organo-metal Method of forming III-V semi-insulating films using organo-metal

1987-06-04

1989-05-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG40, 148DIG41, 148DIG65, 148DIG110, 156613, 156606, 437 81, 437133, 437959, H01L 21285

Patent

active

048309826

ABSTRACT:
Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1.times.10.sup.7 ohm/cm have been achieved.

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