Method of forming high temperature thermistors

Details Method of forming high temperature thermistors Method of forming high temperature thermistors

2007-12-11

2007-12-11

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Thermally responsive

C257S467000, C257SE21004, C257SE21351, C338S0220SD

Reexamination Certificate

active

10846055

ABSTRACT:
A method of manufacturing high temperature thermistors from an ingot. The high temperature thermistors can be comprised of germanium or silicon. The high temperature thermistors have at least one ohmic contact.

REFERENCES:
patent: 3374404 (1968-03-01), Luecke
patent: 3568125 (1971-03-01), Villemant et al.
patent: 3629585 (1971-12-01), Desvignes et al.
patent: 3881181 (1975-04-01), Khajezadeh
patent: 4009482 (1977-02-01), Nakata
patent: 4035757 (1977-07-01), Einthoven et al.
patent: 4047436 (1977-09-01), Bernard et al.
patent: 4063210 (1977-12-01), Collver
patent: 4276535 (1981-06-01), Mitsuyu et al.
patent: 4359372 (1982-11-01), Nagai et al.
patent: 4586829 (1986-05-01), Hübner et al.
patent: 4772866 (1988-09-01), Willens
patent: 5037766 (1991-08-01), Wang
patent: 5141334 (1992-08-01), Castles
patent: 5172211 (1992-12-01), Godinho et al.
patent: 5183530 (1993-02-01), Yamazaki
patent: 5446437 (1995-08-01), Bantien et al.
patent: 5924996 (1999-07-01), Cho et al.
patent: 6023978 (2000-02-01), Dauenhauer et al.
patent: 6077228 (2000-06-01), Schonberger
patent: 6122704 (2000-09-01), Hass
patent: 6316770 (2001-11-01), Ouvrier-Buffet
patent: 6319429 (2001-11-01), Moos et al.
patent: 6354736 (2002-03-01), Cole et al.
patent: 6380840 (2002-04-01), Wienand et al.
patent: 6433666 (2002-08-01), Inoue et al.
patent: 6744346 (2004-06-01), Akram et al.
patent: 2002/0179992 (2002-12-01), Parson
Stanley Wolf and R. N. Tauber, Silicon Processing for the VLSI Era vol. 1, Second Edition, copyright 2000, Lattice Press pp. 5-28.
Stanley Wolf and R. N. Tauber, Silicon Processing for the VLSI Era vol. 1, Second Edition, copyright 2000, Lattice Press, pp. 842-845.
U.S. Appl. No. 11/014,408, Office Action dated May 2, 2006, 7 pages.
U.S. Appl. No. 11/014,408, Office Action dated Oct. 18, 2005, 6 pages.
U.S. Appl. No. 11/014,408, Office Action dated Aug. 15, 2006, 12 pages.
U.S. Appl. No. 11/014,408, Notice of Allowance dated Jun. 8, 2007, 6 pages.
U.S. Appl. No. 11/014,408, Notice of Allowance dated Jan. 23, 2007, 5 pages.

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