Method of forming high purity SiO.sub.2 thin film

Details Method of forming high purity SiO.sub.2 thin film Method of forming high purity SiO.sub.2 thin film

1990-06-05

1991-10-15

Marquis, Melvyn I.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 12, 4271263, 427226, 427251, 427252, 427255, 525474, 528 10, 528 24, 65 31, 65 33, B05D 306

Patent

active

050573365

ABSTRACT:
A material for forming a high purity thin film which includes a silicone ladder polymer dissolved in an organic solvent is applied to a substrate to form a thin film thereon. The thin film is then heated, thereby removing the solvent and simultaneously curing the thin film. Subsequently, the cured thin film is exposed to an oxygen plasma to form a high purity SiO.sub.2 thin film on the substrate. Although the method consists of simple processes and employs low treatment temperatures, it is capable of forming a high purity SiO.sub.2 thin film which exhibits excellent step coverage and high dielectric breakdown strength.

REFERENCES:
patent: 4349609 (1982-09-01), Takeda et al.
patent: 4723978 (1988-02-01), Clodgo et al.
Bytherus et al, "O.sub.2 Plasma-Converted Spin-On Glass for Planarization", J. Vac. Sci. Technol. B, 3(5), Sep./Oct. 1985, pp. 1352-1356.

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