Method of forming high purity metal silicides targets for sputte

Details Method of forming high purity metal silicides targets for sputte Method of forming high purity metal silicides targets for sputte

1991-01-22

1991-10-08

Beck, Shrive

Plastic and nonmetallic article shaping or treating: processes

Gas or vapor deposition of article forming material onto...

4272552, 20419217, 20429812, 20429813, C23C 1642, C23C 1440, C23C 1416

Patent

active

050552465

ABSTRACT:
The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.

REFERENCES:
patent: 4750932 (1988-06-01), Parent et al.
patent: 4851295 (1989-07-01), Brors
patent: 4938798 (1990-07-01), Chiba et al.

Affiliated with

Also associated with

Rating

Method of forming high purity metal silicides targets for sputte does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming high purity metal silicides targets for sputte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming high purity metal silicides targets for sputte will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-255817